any changing of specification will not be informed individual PZT3904 npn silicon general purpose transistor r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com elektronische bauelemente features power dissipation p cm :1 w ? ta m b = 2 5 ? collector current i cm :0.2 a collector-base voltage v (br)cbo :60v operating and storage junction temperature range t j t stg : -55 to +150 unit : mm so t -223 1. base 2. collector 3. emitter f f f f e e f e f e e f 5 5 f e 1 2 3 b c e c electrical characteristics (tamb=25 / unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=10a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic=1ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =10v,i c =0.1ma 40 h fe(2) v ce =1v,i c =1ma 70 h fe(3) v ce =1v,i c =10ma 100 300 h fe(4) v ce =1v,i c =50ma 60 dc current gain h fe(5) v ce =1v,i c =100ma 30 v ce(sat) i c =10ma,i b =1ma 0.2 v collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.3 v v be(sat) i c =10ma,i b =1ma 0.65 0.85 v base-emitter saturation voltage v be(sat) i c =50ma,i b =5ma 0.95 v transition frequency f t v ce =20v,i c =10ma,f=100mhz 300 mhz collector output capacitance c ob v cb =5v,i e =0,f=1mhz 4 pf noise figure nf v ce =5v,i c =0.1ma, f=10hz to 15.7khz,rg=1k
5 db delay time t d 35 ns rise time t r v cc =3v, i c =10ma,v be(off) =0.5v,i b1 =1ma 35 ns storage time t s 200 ns fall time t f v cc =3v, i c =10ma i b1 = i b2 = 1ma 50 ns 01-jun-2002 rev. a page 1 of 5
any changing of specification will not be informed individual PZT3904 npn silicon general purpose transistor figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns ?0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns ?9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias voltage (v) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c http://www.secosgmbh.com elektronische bauelemente 01-jun-2002 rev. a page 2 of 5
any changing of specification will not be informed individual PZT3904 npn silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente figure 5. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s ? 1 / 8 t f i b1 = i b2 typical audio small? signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 9. f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a 01-jun-2002 rev. a page 3 of 5
any changing of specification will not be informed individual PZT3904 npn silicon general purpose transistor h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 11. current gain i c , collector current (ma) 70 100 200 300 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feeback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe ?4 typical static characteristics figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c ?55 c http://www.secosgmbh.com elektronische bauelemente 01-jun-2002 rev. a page 4 of 5
any changing of specification will not be informed individual PZT3904 npn silicon general purpose transistor figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (v) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 17. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 18. temperature coefficients i c , collector current (ma) v, voltage (v) 1.0 2.0 5.0 10 20 50 0 100 ?0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 ?1.0 ?1.5 ?2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c ?55 c to +25 c +25 c to +125 c ?55 c to +25 c vc for v ce(sat) vb for v be(sat) http://www.secosgmbh.com elektronische bauelemente 01-jun-2002 rev. a page 5 of 5
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